VUI72-16NOXT 9~ 6 7~ 1~ 5 4 2 ntc 11 12 10 3~ rectifier bridge + brake unit standard rectifier module part number VUI72-16NOXT backside: isolated features / advantages: applications: package: package with dcb ceramic base plate improved temperature and power cycling planar passivated chips very low forward voltage drop very low leakage current ntc 3~ rectifier with brake unit for drive inverters v1-a-pack industry standard outline rohs compliant soldering pins for pcb mounting height: 17 mm base plate: dcb ceramic reduced weight advanced power cycling isolation voltage: v~ 3600 the data contained in this product data sheet is ex clusively intended for technically trained staff. t he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect t o his application. the specifications of our compon ents may not be considered as an assurance of compo nent characteristics. the information in the valid application- and assembly notes must be considered. should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. due to technical requirements our product may conta in dangerous substances. for information on the typ es in question please contact your local sales offi ce. should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. for any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. terms and conditions of usage rrm 1600 i 75 fsm 600 dav v = va a == i 3~ rectifier ces 1200 brake chopper i 58 ce(sat) 1.85 c25 v = v av == v ixys reserves the right to change limits, condition s and dimensions. 20151102d data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
VUI72-16NOXT v = v ka2s ka2s ka2s ka2s symbol definition ratings typ. max. i r v i a v f 1.10 r 1.1 k/w r min. 75 v rsm v 40 t = 25c vj t = c vj ma 1.5 v = v r t = 25c vj i = a f v t = c c 110 p tot 110 w t = 25c c r k/w 0.3 25 1600 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation conditions unit 1.38 t = 25c vj 150 v f0 v 0.79 t = c vj 150 r f 7.7 m ? v 1.01 t = c vj i = a f v 25 1.37 i = a f 75 i = a f 75 threshold voltage slope resistance for power loss calculation only a 125 v rrm v 1600 max. repetitive reverse blocking voltage t = 25c vj c j 19 junction capacitance v = v; 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 150 600 650 1.30 1.26 aa a a 510 550 1.80 1.76 1600 dav d = rectangular ? bridge output current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 1700 ixys reserves the right to change limits, condition s and dimensions. 20151102d data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
VUI72-16NOXT t = 125c v ces v 1200 collector emitter voltage collector emitter saturation voltage t = 25c collector current a 58 a c vj symbol definition ratings typ. max. min. conditions unit 40 v v ce(sat) total power dissipation 195 w collector emitter leakage current 6.5 v turn-on delay time 70 ns t reverse bias safe operating area a v ges v 20 v gem max. transient gate emitter voltage t = c c v p tot gate emitter threshold voltage rbsoa 105 30 t = 125c t = 125c vj v max. dc gate voltage i c25 i c t = 25c vj i = a; v = 15 v c ge t = 25c vj v ge(th) i ces i = ma; v = v c ge ce v = v ; v = 0 v ce ces ge i ges t = 25c vj gate emitter leakage current v = 20 v ge 2.15 2.15 5.9 5.4 ma 0.1 ma 0.1 500 g(on) total gate charge v = v; v = 15 v; i = a ce q ge c 110 nc tt t e e d(on) r d(off) f on off 40 ns 250 ns 100 ns 3.8 mj 4.1 mj current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load v = v; i = a v = 15 v; r = ? ce c ge g v = 15 v; r = ? ge g v = v cek 1200 short circuit safe operating area s scsoa 10 t = 125c vj v = v; v = 15 v ce ge short circuit duration t short circuit current i sc sc r = ? ; non-repetitive g 140 a r thjc thermal resistance junction to case 0.25 k/w v rrm v 1200 max. repetitive reverse voltage t = 25c vj t = 25c forward current a 0 a c tbd t = c c i f25 i f t = 25c forward voltage v tbd v vj tbd t = 125c vj v f i = a f t = 25c reverse current ma tbd ma vj tbd t = 125c vj i r r rrm t = 125c vj qi t rr rm rr tbd c tbd a tbd ns reverse recovery charge max. reverse recovery current reverse recovery time v = -di /dt = a/s i = a f f r r thjc thermal resistance junction to case tbd k/w v = v t = 25c c t = 25c vj t = 125c vj vj 35 2 35 35 27 27 27 600 900 600 i cm 1.85 r thch thermal resistance case to heatsink 0.65 k/w 0 r thch thermal resistance case to heatsink k/w brake igbt + diode brake diode 600 v 80 80 80 80 na v = v cek 1200 ixys reserves the right to change limits, condition s and dimensions. 20151102d data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
VUI72-16NOXT ratings part number (typ) yywwa date code prod. index lot no.: data matrix: typ (1-19), dc+ prod.index (20-25), fkt# (26-31) leer (33), lfd.# (33-36) package t op c m d nm 2.5 mounting torque 2 t vj c 150 virtual junction temperature -40 weight g 37 symbol definition typ. max. min. conditions operation temperature unit v v t = 1 second v t = 1 minute isolation voltage mm mm 6.0 12.0 d spp/app creepage distance on surface | striking distance th rough air d spb/apb terminal to backside i rms rms current 100 a per terminal 125 -40 terminal to terminal v1-a-pack delivery mode quantity code no. ordering number marking on product ordering 0 50 100 150 0 1000 2000 3000 4000 5000 6000 700 0 r [ ] typ. ntc resistance vs. temperature t c [c] 50/60 hz, rms; i 1 ma isol VUI72-16NOXT 510748 blister 24 VUI72-16NOXT standard 3600 isol t stg c 125 storage temperature -40 3000 threshold voltage v 0.79 m ? v 0 max r 0 max slope resistance * 6.5 1.1 40 equivalent circuits for simulation t = vj i v 0 r 0 rectifier brake igbt + 150 c * on die level t = 25 resistance k ? 2.27 k vj 3560 r 25 b 25/50 2.2 2.13 temperature coefficient symbol definition typ. max. min. conditions unit temperature sensor ntc ixys reserves the right to change limits, condition s and dimensions. 20151102d data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
VUI72-16NOXT remarks / bemerkungen: 1. nominal distance mounting screws on heat sink: 5 2 mm / nennabstand befestigungsschrauben auf khlk?rper: 5 2 mm 2. general tolerance / allgemeintoleranz : din iso 2768 -t1-c 3. surface treatment of pins: tin plated (sn) in ho t dip / oberfl?chenbehandlung der pins: verzinnt (sn) im tau chbad 4. detail x : ejot pt? self-tapping screws (dimension k25) to be recommended for mounting on pcb selbstschneidende schraube (g r??e k25) empfohlen fr die pcb-montage t ake care on the maximum screw length according to b oard thickness and the maximum hole depth of 6 mm bei der wahl der schraubenl?nge die pcb-dicke und die maximale lochtiefe von 6mm beachten recommended mounting torque: 1.5 nm / empfohlenes drehmoment: 1.5 nm 3 8 1 2 4 5 7 9 10 6 6 52 (see 1) 5,5 25 25,75 5,5 15 12,2 1x45 0,3 11,75 0,3 0,5 *11 = = *14 *7 *14 *7 *0 *14 *7 *14 *7 *0 25 25,75 0,3 *11 *0 ? 0,8 * 11,75 0,3 marking on product aufdruck der typenbezeichnung 26 31,6 0,5 2 +0,2 3,6 0,5 ? 0,5 15,8 1 8,3 0,1 1 0,2 2 +0,2 35 63 13 17 r2 max. 0,25 0,25 4,6 5 1 1 ? 6,1 ? 2,5 1,5 ? 2,1 4 6 9~ 6 7~ 1~ 5 4 2 ntc 11 12 10 outlines v1-a-pack ixys reserves the right to change limits, condition s and dimensions. 20151102d data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
VUI72-16NOXT 01 1 400 800 1200 1600 2000 v f [v] i f [a] 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 10 -3 10 -2 10 -1 10 0 200 300 400 5 0 0 1 10 100 1000 10000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 175 0 4 8 12 16 20 24 28 32 0 8 16 24 32 0 25 50 75 100 125 150 0 20 40 60 80 100 i fsm [a] t [s] t [ms] i 2 t [a 2 s] p tot [w] i davm [a] t a [c] i f(av)m [a] t c [c] z thjc [k/w] t [ms] constants for z thjc calculation: i r th (k/w) t i (s) 1 0.0607 0.0004 2 0.1230 0.00256 3 0.2305 0.0045 4 0.4230 0.0242 5 0.2628 0.1800 0.8 x v rrm 50 hz t vj = 45c v r = 0 v r thja : 0.6 kw 0.8 kw 1 kw 2 kw 4 kw 8 kw dc = 1 0.5 0.4 0.33 0.17 0.08 t vj = 125c 150c t vj = 25c t vj = 150c t vj = 150c fig. 1 forward current vs. voltage drop per diode fig. 2 surge overload current vs. time per diode fig. 3 i 2 t vs. time per diode fig. 4 power dissipation vs. forward current and ambient temperature per diode fig. 5 max. forward current vs. case temperature per diode f i g. 6 transie n t therma l im p edance j uncti o n to cas e vs. time per d i od e dc = 1 0.5 0.4 0.33 0.17 0.08 t vj = 45c rectifier ixys reserves the right to change limits, condition s and dimensions. 20151102d data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
VUI72-16NOXT 0 1 2 3 0 10 20 30 40 50 60 70 0 20 40 60 80 0 2 4 6 8 10 0 1 2 3 4 5 0 10 20 30 40 50 60 7 0 v ce [v] i c [a] q g [nc] v ge [v] 9 v 11 v 5 6 7 8 9 10 11 12 13 0 10 20 30 40 50 60 7 0 0 20 40 60 80 100 120 140 0 5 10 15 20 13 v 20 40 60 80 3 4 5 6 e [mj] e on fig. 1 typ. output characteristics v ce [v] i c [a] v ge = 15 v 17 v 19 v fig. 2 typ. output characteristics i c [a] fig. 3 typ. tranfer characteristics v ge [v] fig. 4 typ. turn-on gate charge fig. 5 typ. switching energy versus collector current e off fig. 6 typ. switching energy versus gate resistance r g [ ] e [mj] i c [a] e on e off t vj = 125c t vj = 25c v ge = 15 v t vj = 125c t vj = 125c t vj = 25c i c = 35 a v ce = 600 v r g = 27 v ce = 600 v v ge = 15 v t vj = 125c i c = 35 a v ce = 600 v v ge = 15 v t vj = 125c 0.0001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 t [s] z thjc [k/w] fig. 7 t y p. transie n t therma l im p edanc e brake igbt + diode ixys reserves the right to change limits, condition s and dimensions. 20151102d data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
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